The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Oct. 08, 2013
Infineon Technologies Ag, Neubiberg, DE;
Hermann Gruber, Woerth an der Donau, DE;
Thomas Gross, Sinzig, DE;
Werner Irlbacher, Nabburg, DE;
Markus Zundel, Egmating, DE;
Mathias von Borcke, Munich, DE;
Hans Joachim Schulze, Ottobrunn, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method for producing a polysilicon resistor device may include: forming a polysilicon layer; implanting first dopant atoms into at least a portion of the polysilicon layer, wherein the first dopant atoms include deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon layer; and annealing said at least a portion of said polysilicon layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile