The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2017
Filed:
Oct. 08, 2013
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Hermann Gruber, Woerth an der Donau, DE;
Thomas Gross, Sinzig, DE;
Werner Irlbacher, Nabburg, DE;
Markus Zundel, Egmating, DE;
Mathias von Borcke, Munich, DE;
Hans Joachim Schulze, Ottobrunn, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 27/08 (2006.01); H01L 21/266 (2006.01); G01K 7/18 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); G01K 7/186 (2013.01); H01L 21/266 (2013.01); H01L 27/0802 (2013.01);
Abstract
A method for producing a polysilicon resistor device may include: forming a polysilicon layer; implanting first dopant atoms into at least a portion of the polysilicon layer, wherein the first dopant atoms include deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon layer; and annealing said at least a portion of said polysilicon layer.