Shanghai, China

Wenyan Sun

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Shanghai Huali Microelectronics Corporation. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wenyan Sun. Retrieved from https://idiyas.com/inventor/wenyan-sun

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Wenyan Sun - Innovator in Semiconductor Technology

Introduction

Wenyan Sun is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device and its manufacturing method.

Latest Patents

Wenyan Sun holds 1 patent for a semiconductor device and method for manufacturing the same. The patent outlines a method that includes providing a substrate with stacked gates, depositing carbon-containing and non-carbon-containing silicon oxide layers, and planarizing these layers to create a semiconductor device. This method simplifies the process of removing the silicon oxide mask layer above the stacked gates.

Career Highlights

Wenyan Sun is associated with Shanghai Huali Microelectronics Corporation, where he applies his expertise in semiconductor manufacturing. His work has been instrumental in advancing the technology used in semiconductor devices.

Collaborations

Wenyan has collaborated with notable colleagues, including Pengkai Xu and Fulong Qiao, contributing to various projects within the semiconductor industry.

Conclusion

Wenyan Sun's innovative approach to semiconductor technology showcases his dedication to advancing the field. His contributions are significant and continue to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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