Wensheng Wei

Title: Wensheng Wei and Silicon Carbide Transistor Innovation

Introduction

Wensheng Wei is an inventor associated with Wenzhou University in Wenzhou, China. His listed patent concerns a silicon carbide heterojunction transistor designed to operate in a normally-off state.

Latest Patents

Wei is credited with 1 patent: “Silicon carbide heterojunction normally-off high-electron-mobility transistor and method for preparing the same.” The invention describes a process for building a 3C-SiC/4H-SiC heterojunction transistor. It uses layers of silicon carbide grown on a 4H-SiC substrate, followed by the formation of electrodes and protective films.

The method is designed to maintain homogeneous elements on both sides of the heterojunction interface during preparation. According to the supplied description, this helps prevent diffusive contamination and reduces process complexity.

Career Highlights

Wei’s listed work focuses on semiconductor device fabrication and silicon carbide heterostructures. The patent’s layered design aims to support a normally-off, single-channel high-electron-mobility transistor.

Collaborations

Wei’s listed coworkers include Senrong Dai and Jingyang Ding. His institutional affiliation is Wenzhou University.

Conclusion

Wensheng Wei’s patent documents a silicon carbide transistor design and preparation method intended to simplify fabrication while limiting interface contamination.