Silicon carbide heterojunction normally-off high-electron-mobility transistor and method for preparing the same

Abstract

A method for preparing a silicon carbide heterojunction normally-off high-electron-mobility transistor includes selecting an unintentionally doped n-type 4H-SiC chip as a substrate; growing a 4H-SiC transition layer on the substrate through isomorphic epitaxial growth, and growing a C face on the 4H-SiC transition layer through epitaxial growth; growing an unintentionally doped 3C-SiC potential well layer on the C face; growing an n-type doped 4H-SiC barrier layer on the 3C-SiC potential well layer, and growing a Si face on the 4H-SiC barrier layer through epitaxial growth; growing an unintentionally doped 3C-SiC cap layer on the Si face; and producing electrodes and protective films, so as to obtain a 3C-SiC/4H-SiC heterojunction normally-off single-channel high-electron-mobility transistor. The method allows both sides of the SiC heterojunction interface to have homogeneous elements during preparation, thereby eliminating diffusive contamination and reducing process complexity.