This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2022.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2022
Title: Innovations of Wenqiang Chen in 3D Memory Technology.
Introduction
Wenqiang Chen is a notable inventor based in Wuhan, China. He has made significant contributions to the field of memory technology, particularly in the development of three-dimensional memory devices. His innovative work has led to advancements that enhance the efficiency and functionality of memory storage solutions.
Latest Patents
Wenqiang Chen holds a patent for a three-dimensional memory device erase operation. The patent outlines implementations that provide 3D memory devices and methods for operating these devices. In his invention, a 3D memory device comprises multiple memory layers and a dummy memory layer situated between them. A NAND memory string extends through these layers, featuring a source, a drain, and several memory cells positioned at intersections with the memory layers. The device also includes a peripheral circuit designed to erase the memory cells, utilizing a word line driving circuit that applies a positive bias voltage on the dummy memory layer.
Career Highlights
Wenqiang Chen is currently employed at Yangtze Memory Technologies Co., Ltd. His role at the company allows him to work on cutting-edge memory technologies, contributing to the advancement of the industry. His expertise in 3D memory devices positions him as a key player in the field.
Collaborations
Wenqiang Chen collaborates with talented individuals such as Shiyu Xia and Feng Xu. Their combined efforts contribute to the innovative projects at Yangtze Memory Technologies Co., Ltd.
Conclusion
Wenqiang Chen's work in 3D memory technology exemplifies the impact of innovation in the field of memory devices. His contributions are paving the way for future advancements in memory storage solutions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
