Wenkai Liu

Title: Wenkai Liu: Innovator in Non-Volatile Memory Technologies

Introduction

Wenkai Liu is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of non-volatile memory technologies, holding 2 patents that showcase his innovative approach to memory testing and leak detection.

Latest Patents

One of Wenkai Liu's latest patents is titled "Self-learning built-in self-test (BIST) for leak detection in non-volatile memory." This invention focuses on a word line leakage detection process in NAND or other non-volatile memory devices. It determines leaky blocks of a memory device by comparing the current drawn by the peripheral circuitry of the block with a sequence of comparison current values. This process helps identify faulty blocks while minimizing test times by using a common reference value for groups of blocks sharing supply lines.

Another notable patent is "Non-volatile memory with autonomous cycling." This invention involves a memory die assembly that autonomously tests itself by performing a series of tests, including programming, erasing, and reading the non-volatile memory structure. It records failure events by storing error data, which includes the location of the failure, the type of test that failed, and the cycle during which the failure occurred.

Career Highlights

Wenkai Liu has worked with leading companies in the technology sector, including Western Digital Technologies, Inc. and SanDisk Technologies Inc. His experience in these organizations has allowed him to refine his skills and contribute to advancements in memory technology.

Collaborations

Throughout his career, Wenkai Liu has collaborated with talented individuals such as Liang Li and Yan Li. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Wenkai Liu's contributions to non-volatile memory technologies through his patents reflect his expertise and commitment to innovation. His work continues to influence the field and pave the way for future advancements in memory technology.