Wenhao Geng

Title: Innovations by Wenhao Geng in Silicon Carbide Wafer Manufacturing

Introduction

Wenhao Geng is a notable inventor based in Hangzhou, China. He has made significant contributions to the field of semiconductor manufacturing, particularly in the production of silicon carbide (SiC) single crystal wafers. His innovative approaches have the potential to enhance the efficiency and quality of wafer production.

Latest Patents

Wenhao Geng holds a patent for a "Stripping method and stripping device for silicon carbide single crystal wafers." This patent addresses the challenges in manufacturing SiC wafers by introducing a method and device that ensure the wafers are free from damage layers or stress residues on their surfaces or sub-surfaces. The techniques described in his patent are not only effective but also cost-efficient and easy to operate.

Career Highlights

Wenhao Geng is affiliated with the ZJU-Hangzhou Global Scientific and Technological Innovation Center. His work at this institution has allowed him to focus on advancing technologies related to semiconductor materials and processes. His expertise in this area has positioned him as a key figure in the development of innovative manufacturing techniques.

Collaborations

Wenhao Geng collaborates with talented individuals such as Rong Wang and Xiaodong Pi. Their combined efforts contribute to the advancement of research and development in the field of silicon carbide technologies.

Conclusion

Wenhao Geng's contributions to the manufacturing of silicon carbide single crystal wafers exemplify the importance of innovation in the semiconductor industry. His patented methods and devices are paving the way for improved production techniques that promise to benefit the field significantly.