Taichung, Taiwan

Wen-Tsing Tzeng


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 57(Granted Patents)


Company Filing History:


Years Active: 2001

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2 patents (USPTO):Explore Patents

Title: Innovations by Wen-Tsing Tzeng

Introduction

Wen-Tsing Tzeng is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of integrated circuits, particularly in the area of fuse access openings and dielectric thickness control.

Latest Patents

Wen-Tsing Tzeng holds 2 patents that showcase his innovative methods. His first patent, titled "Process for controlling oxide thickness over a fusible link using transient etch stops," describes a method for progressively forming a fuse access opening for laser trimming in integrated circuits. This process improves the control of dielectric thickness over the fuse, ensuring a uniform thickness of the insulative layer. The second patent, "Passivation layer etching process for memory arrays with fusible links," outlines a method for forming fuse access openings in integrated circuits that utilize redundancy and laser trimming. This method effectively removes cumulative thickness non-uniformities and allows for efficient access to bonding pads and laser access openings.

Career Highlights

Wen-Tsing Tzeng is currently employed at Vanguard International Semiconductor Corporation, where he continues to develop innovative solutions in semiconductor technology. His work has significantly impacted the efficiency and reliability of integrated circuits.

Collaborations

Wen-Tsing has collaborated with several talented individuals, including Chun-Pin Yang and Hsing-Lien Lin, who contribute to the advancement of technology in their respective fields.

Conclusion

Wen-Tsing Tzeng's contributions to the field of integrated circuits through his innovative patents demonstrate his expertise and commitment to advancing technology. His work continues to influence the semiconductor industry positively.

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