Company Filing History:
Years Active: 2024-2025
Title: Innovations by Wen Qing Lv in Memory Storage Technology
Introduction
Wen Qing Lv is a notable inventor based in Anhui, China, recognized for his contributions to memory storage technology. With a total of two patents to his name, he has made significant advancements in data writing methods and memory control systems. His work is pivotal in enhancing the efficiency and performance of memory storage devices.
Latest Patents
Wen Qing Lv's latest patents include a data writing method, a memory storage device, and a memory control circuit unit. The data writing method involves calculating a first number based on the ratio of the capacity of at least one first system table to the capacity of a physical block. It also includes calculating a second number according to the ratio of a capacity of at least one second system table to the capacity of the physical block. This method allows for obtaining at least one physical block from a plurality of physical blocks as a first virtual block and a second virtual block based on the first and second numbers respectively. Another significant patent is the performance match method of memory, which includes receiving a performance match command from a host system. In response, it adjusts the operation settings of a memory storage device to align its performance with the requirements of the host system.
Career Highlights
Wen Qing Lv is currently employed at Hefei Core Storage Electronic Limited, where he continues to innovate in the field of memory technology. His work has been instrumental in developing solutions that enhance the performance and reliability of memory storage devices.
Collaborations
Wen Qing Lv collaborates with talented individuals in his field, including Chih-Ling Wang and Dong Dong Yao. Their combined expertise contributes to the advancement of memory storage technologies.
Conclusion
Wen Qing Lv's innovative work in memory storage technology showcases his commitment to improving data management systems. His patents reflect a deep understanding of the complexities involved in memory control and data writing methods. His contributions are vital for the ongoing evolution of memory storage solutions.
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