Hefei Core Storage Electronic Limited

Wen Qing Lv

Kuai Cao

Chih-Ling Wang

Dong Dong Yao

En Yang Wang

Yun Zhang

A data writing method, a memory storage device, and a memory control circuit unit are provided. The data writing method includes the following: calculating a first number according to a ratio of a capacity of at least one first system table to a capacity of a physical block; calculating a second number according to a ratio of a capacity of at least one second system table to the capacity of the physical block; and obtaining at least one physical block from a plurality of physical blocks as a first virtual block and a second virtual block based on the first number and the second number respectively.

Data writing method, memory storage device and memory control circuit unit

A performance match method of memory, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving a performance match command from a host system; in response to the performance match command, adjusting an operation setting of a memory storage device to match a performance of the memory storage device with a performance requirement of the host system; and interacting with the host system based on the adjusted operation setting.

Growing community of inventors

Anhui, China

Wen Qing Lv