Wen Kuei Huang

Title: Innovations by Wen Kuei Huang

Introduction

Wen Kuei Huang is a notable inventor based in Boise, ID (US). She has made significant contributions to the field of memory technology, holding 2 patents that showcase her innovative approach to memory arrays.

Latest Patents

Her latest patents include "Memory having buried digit lines and methods of making the same." This invention describes a memory array that features memory cells and methods for their formation. The memory array incorporates a buried digit line situated in a first horizontal planar volume, with a word line positioned in a second horizontal planar volume above it. Additionally, storage devices are formed atop vertical access devices, such as finFETs, in a third horizontal planar volume above the second. The architecture of the memory array follows a 4F design, where each memory cell consists of two vertical access devices, each linked to a single storage device.

Career Highlights

Wen Kuei Huang is currently employed at Micron Technology Incorporated, where she continues to push the boundaries of memory technology. Her work has been instrumental in advancing the capabilities of memory arrays, making them more efficient and effective.

Collaborations

Wen Kuei has collaborated with notable colleagues, including Kunal R Parekh and David K Hwang, contributing to a dynamic and innovative work environment.

Conclusion

Wen Kuei Huang's contributions to memory technology through her patents and work at Micron Technology Incorporated highlight her role as a leading inventor in her field. Her innovative designs and collaborative efforts continue to shape the future of memory technology.