Wen-Kuei Hsieh

Title: Innovations of Wen-Kuei Hsieh in Contact Etching Technology.

Introduction

Wen-Kuei Hsieh is a notable inventor based in Tainan County, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly in contact etching technology. His innovative methods have paved the way for advancements in the production of electronic devices.

Latest Patents

Wen-Kuei Hsieh holds a patent for a method titled "Contact etching utilizing partially recessed hard mask." This invention describes a technique for forming contact holes using a partially recessed hard mask. The process involves providing a substrate with a device region and an alignment region that contains an opening acting as an alignment mark. A dielectric layer is formed over the substrate, filling the opening, followed by the formation of a polysilicon layer. The polysilicon layer includes a recessed region over the alignment region and a plurality of holes over the device region to expose the underlying dielectric layer. The exposed dielectric layer on the device region is then etched to create contact holes.

Career Highlights

Wen-Kuei Hsieh is associated with Nan Ya Technology Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in enhancing the efficiency and precision of contact etching processes.

Collaborations

Wen-Kuei has collaborated with several talented individuals, including Hui-Min Mao and Yi-Nan Chen. Their combined efforts contribute to the innovative environment at Nan Ya Technology Corporation.

Conclusion

Wen-Kuei Hsieh's contributions to contact etching technology exemplify the importance of innovation in the semiconductor industry. His patent and collaborative efforts continue to influence advancements in electronic device manufacturing.