Nan Ya Technology Corporation

Wen-Kuei Hsieh

Yi-Nan Chen

Hui-Min Mao

A method for forming contact holes using a partially recessed hard mask. A substrate with a device region and an alignment region having an opening therein, acting as an alignment mark, is provided. A dielectric layer is formed overlying the substrate and fills the opening. A polysilicon layer is formed on the dielectric layer, with over the opening on the alignment region comprising a recessed region and on the device region comprising a plurality of holes therein to expose the underlying dielectric layer. The exposed dielectric layer on the device region is etched to form contact holes therein.

Growing community of inventors

Tainan County, Taiwan

Wen-Kuei Hsieh