The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Aug. 20, 2004
Applicants:
Wen-kuei Hsieh, Tainan County, TW;
Hui-min Mao, Taipei, TW;
Yi-nan Chen, Taipei, TW;
Inventors:
Assignee:
Nanya Technology Corporation, Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming contact holes using a partially recessed hard mask. A substrate with a device region and an alignment region having an opening therein, acting as an alignment mark, is provided. A dielectric layer is formed overlying the substrate and fills the opening. A polysilicon layer is formed on the dielectric layer, with over the opening on the alignment region comprising a recessed region and on the device region comprising a plurality of holes therein to expose the underlying dielectric layer. The exposed dielectric layer on the device region is etched to form contact holes therein.