Wen-Jer Tsai

Title: Wen-Jer Tsai’s Memory-Device Patents

Introduction

Wen-Jer Tsai is an inventor associated with Hualien, Taiwan, and Macronix International. Tsai’s patent work focuses on memory-device technologies, including methods for erasing memory and concealing data in 3D NAND flash. The provided information lists 2 patents.

Latest Patents

**Erase Method for Memory Device and Memory Device.** This invention describes an erase method for a high-capacity, high-performance 3D NAND flash memory device. It divides memory cells in a block into first-page and second-page groups, with dummy cells between them. After programming pages in both groups, the method uses gate-induced drain leakage (GIDL) to erase the first pages while inhibiting the second pages and dummy cells.

**Writing Method, Reading Method and Memory Device for Hiding Data.** This invention presents methods for hiding data in a memory device, which may be a 3D NAND flash. It programs portions of a page into different sub-potential states by adjusting cell threshold voltages. The method also applies pass voltages to word lines in pages adjacent to the specific page.

Career Highlights

Tsai’s listed inventions address memory operation and data handling in 3D NAND flash. The erase method selectively targets pages while inhibiting other cells, while the data-hiding method uses distinct threshold-voltage states to encode information.

Collaborations

The provided information identifies You-Liang Chou and Chun-Chang Lu as Tsai’s coworkers. It does not specify their roles in the listed patents.

Conclusion

Wen-Jer Tsai’s two listed patents focus on selective erasure and data hiding in 3D NAND memory, reflecting work on memory-device performance and data management.