The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Jul. 02, 2024
Macronix International Co., Ltd., Hsinchu, TW;
You-Liang Chou, Taichung City, TW;
Wen-Jer Tsai, Hualien County, TW;
Chih-Chieh Cheng, Hsinchu County, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A memory erase method for a memory device and a memory device are provided. The memory device is a 3D NAND flash with high capacity and high performance. The memory erase method includes: providing a memory block, which comprises memory cell strings including first-part memory cells, dummy cells, and second-part memory cells, wherein the first-part memory cells on each memory string are constructed as first pages, and the second-part memory cells on each memory string are constructed as second pages; performing a program operation to one of the first pages and one of the second pages; performing a gate induced drain leakage (GIDL) erasing operation to the first pages; and, inhibiting the second pages and the dummy cells of each memory cell string while the GIDL erasing operation are performed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile