This inventor holds 1 USPTO granted patent. Top assignee: United Microelectronics Corp.. Active years: 2002.
Company Filing History:
Years Active: 2002
Title: Innovations of Wen-Chi Ting in Vertical Two-Transistor Flash Memory
Introduction
Wen-Chi Ting is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of memory technology, particularly with his innovative designs in flash memory cells. His work has led to advancements that enhance the efficiency and reliability of memory storage solutions.
Latest Patents
Wen-Chi Ting holds a patent for a vertical two-transistor flash memory. This invention features a memory cell that consists of a MOS transistor and an ETOX cell. The design allows for improved programming and erasing methods, utilizing channel Fowler-Nordheim tunneling of electrons. This technology helps to avoid disturbances in the word line, making it a valuable advancement in memory cell design.
Career Highlights
Ting is associated with United Microelectronics Corporation, where he continues to develop cutting-edge memory technologies. His work has been instrumental in pushing the boundaries of what is possible in flash memory design. With a focus on vertical two-transistor memory cells, he has contributed to the evolution of memory storage solutions.
Collaborations
Wen-Chi Ting has collaborated with notable colleagues, including Gary Y Hong and Hwi-Huang Chen. These partnerships have fostered an environment of innovation and creativity, leading to significant advancements in their respective fields.
Conclusion
Wen-Chi Ting's contributions to the field of memory technology, particularly through his patent for vertical two-transistor flash memory, highlight his role as an influential inventor. His work continues to impact the industry, paving the way for future innovations in memory storage.