Hsinchu, Taiwan

Wen-Bin Lu

This inventor holds 3 USPTO granted patents. Top assignee: United Microelectronics Corp.. Active years: 2007-2009.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2007-2009

Loading Chart...
3 patents (USPTO):Explore Patents

Title: Innovations of Inventor Wen-Bin Lu

Introduction

Wen-Bin Lu is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly in methods that enhance the performance and reliability of integrated circuits. With a total of 3 patents to his name, his work is recognized for its innovative approaches to reducing damage during the manufacturing process.

Latest Patents

One of his latest patents is a method of reducing charging damage to integrated circuits during semiconductor manufacturing. This patent describes an integrated circuit die that includes a first device region, a second device region, and a non-active region. A first implant mask is formed over the semiconductor substrate, covering the second device region and the non-active region while exposing the first device region. Dopant species are implanted into the exposed semiconductor substrate within the first device region to create first doping regions. Additionally, a second implant mask is formed, covering the first device region while exposing the second device region and a portion of the non-active region, allowing for the implantation of dopant species into the second active device region.

Another patent by Lu focuses on a semiconductor substrate with an integrated circuit die area surrounded by a scribe lane. Within this area, a first trench isolation region and a second trench isolation region are formed. The first trench isolation region isolates a first active device region from a second active device region, while the second trench isolation region includes trench dummy features to reduce loading effects. A first gate electrode is formed on the first active device region, and a second gate electrode is placed on the second active device region. The first active device region is masked, allowing for an ion implantation process to implant dopant species into the second active device region.

Career Highlights

Wen-Bin Lu is currently employed at United Microelectronics Corporation, where he continues to innovate in the semiconductor field. His work has been instrumental in advancing technologies that improve the efficiency and effectiveness of integrated circuits.

Collaborations

Throughout his career, Lu has collaborated with several talented individuals, including Ko-Ting Chen and Chao-Hu Liang. These collaborations have contributed to the development of cutting-edge technologies in semiconductor manufacturing.

Conclusion

Wen-Bin Lu's contributions to the field of semiconductor manufacturing are significant and impactful. His innovative patents reflect a deep understanding of the complexities involved in integrated circuit

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to [email protected]
Loading…