This inventor holds 1 USPTO granted patent. Top assignee: Chinese Academy of Sciences. Active years: 2009.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2009
Title: Weining Wang and an MRAM Writing Innovation.
Introduction
Weining Wang is an inventor associated with the Chinese Academy of Sciences in Beijing, China. His patent work includes an approach to writing information in magnetoresistive random-access memory (MRAM).
Latest Patents
Wang is credited with 1 patent: “MRAM Based on Vertical Current Writing and Its Control Method.” The invention writes information through the combined effect of a magnetic field generated by current flowing parallel to the MFC unit and another current flowing vertically through it. According to the supplied description, this design eliminates a dedicated word line used for writing, reduces metal wiring layers and contact holes, and simplifies the MRAM structure and its manufacturing process.
Career Highlights
Wang’s listed patent highlights work on MRAM architecture and memory-writing methods. The invention focuses on reducing structural complexity and manufacturing difficulty and cost.
Collaborations
The supplied information names Zilong Peng and Sufen Zhao as Wang’s coworkers. It does not specify their roles in the patent or their relationship to the invention.
Conclusion
Weining Wang’s listed MRAM patent presents a vertical-current writing approach intended to simplify memory design and manufacturing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile