The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2009
Filed:
Dec. 01, 2004
Zilong Peng, Beijing, CN;
Xiufeng Han, Beijing, CN;
Sufen Zhao, Beijing, CN;
Weining Wang, Beijing, CN;
Wenshan Zhan, Beijing, CN;
Zilong Peng, Beijing, CN;
Xiufeng Han, Beijing, CN;
Sufen Zhao, Beijing, CN;
Weining Wang, Beijing, CN;
Wenshan Zhan, Beijing, CN;
Institute of Physics Chinese Academy of Science, Beijing, CN;
Abstract
The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.