This inventor holds 1 USPTO granted patent. Top assignee: Chinese Academy of Sciences. Active years: 2009.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2009
Title: Sufen Zhao and an MRAM Invention
Introduction
Sufen Zhao is a woman inventor associated with the Chinese Academy of Sciences in Beijing, China. Her patent work includes an approach to magnetoresistive random-access memory (MRAM) that uses vertical current writing.
Latest Patents
The provided information lists one patent for Zhao: “MRAM Based on Vertical Current Writing and Its Control Method.” The invention describes writing information in an MRAM unit through the combined effects of a magnetic field generated by current flowing parallel to the MFC unit and another current flowing perpendicular to and through that unit. According to the patent description, this design eliminates a dedicated word line used for writing in prior approaches, reduces metal wiring layers and contact holes, and simplifies the MRAM structure and its manufacturing process.
Career Highlights
Zhao’s listed patent reflects work on memory-device architecture and methods for controlling information writing. Her affiliation with the Chinese Academy of Sciences connects her to a major research institution in China. The supplied data attributes 1 patent to her.
Collaborations
The provided information names Zilong Peng and Xiufeng Han as Zhao’s coworkers. Their specific roles in the patent or related research are not stated.
Conclusion
Sufen Zhao’s documented invention proposes a vertical-current MRAM writing method intended to simplify device structure and manufacturing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile