Shanghai, China

Weijia Xue

This inventor holds 1 USPTO granted patent. Top assignee: Advanced Semiconductor Manufacturing Co. Ltd.. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Weijia Xue. Retrieved from https://idiyas.com/inventor/weijia-xue

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2018

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Weijia Xue: Innovator in Semiconductor Technology

Introduction

Weijia Xue is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique patent that enhances the manufacturing process of composite cavities.

Latest Patents

Weijia Xue holds a patent for a "Composite cavity and forming method thereof." This invention provides a method for forming a composite cavity and a composite cavity formed using the method. The process involves several steps, including the provision of a silicon substrate, the formation of an oxide layer, and the patterning of the oxide layer to create grooves corresponding to the positions of small cavities. The method ensures the uniformity of thickness in the semiconductor medium layer where the small cavity is located, showcasing the effectiveness of his invention.

Career Highlights

Weijia Xue is associated with Advanced Semiconductor Manufacturing Co. Ltd., where he applies his expertise in semiconductor manufacturing. His work has been instrumental in advancing the technology used in the industry.

Collaborations

Weijia collaborates with talented individuals such as Yuanjun Xu and Yilin Yan, who contribute to the innovative projects at their company.

Conclusion

Weijia Xue's contributions to semiconductor technology through his patent demonstrate his commitment to innovation and excellence in the field. His work continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…