Shanghai, China

Weibing Shang

This inventor holds 3 USPTO granted patents and 8 published patent applications and 9 EPO patents. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2023-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Weibing Shang. Retrieved from https://idiyas.com/inventor/weibing-shang-x29jmqla

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 3 

% Patents Active = 100.0

 

Average Co-Inventor Count = 1.3

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Shanghai, CN (2023)
  • Anhui, CN (2024)

Company Filing History:


Years Active: 2023-2024

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3 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Inventor Weibing Shang

Introduction

Weibing Shang is a prominent inventor based in Shanghai, China, known for his remarkable contributions to the field of memory technologies. With a total of three patents to his name, Shang has made significant strides in advancing semiconductor memory applications. His innovative ideas and solutions are shaping the future of memory systems and amplifying the efficiency of data processing.

Latest Patents

Shang’s latest inventions include high-impact patents that are crucial in the realm of memory technology. One of his notable patents is for "Memory array layers with alternating sense amplifier layers". This invention outlines a memory system comprising bit lines extending along a first direction and word lines along a second direction. The structure features multiple memory modules arranged along the first direction, with a column selection circuit and a read-write control driver circuit located on the same side of these modules. The design ensures efficient communication within the memory architecture, allowing for enhanced performance.

Additionally, his patent titled "Control amplifying circuit, sense amplifier and semiconductor memory" introduces a sophisticated control amplifying circuit that optimizes power supply management. This circuit includes a power supply output circuit designed to select from multiple preset voltage values based on a power supply switching signal. Such innovations are instrumental in amplifying signals and improving memory operation efficiency.

Career Highlights

Weibing Shang has established himself as a key figure in the memory technology landscape, primarily working with Changxin Memory Technologies, Inc. Through his role at the company, he has contributed to the development of cutting-edge memory solutions that support the demands of modern computing.

Collaborations

In his journey as an inventor, Shang has collaborated with esteemed colleagues such as Hongwen Li and Liang Zhang. Their joint efforts have fostered an environment of innovation, allowing them to exchange ideas and enhance their research capabilities in the field of semiconductor technologies.

Conclusion

Weibing Shang’s inventive spirit and dedication to advancing memory technologies underscore his significance as an inventor. With three patents that reflect his innovative prowess, Shang continues to contribute valuable insights and advancements in the semiconductor industry. His work not only enhances memory functionalities but also sets a foundation for future developments in this essential field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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