This inventor holds 1 USPTO granted patent. Top assignees: Chartered Semiconductor Manufacturing Ltd (Corporation), International Business Machines Corporation, Samsung Electronics Co., Ltd.. Active years: 2011.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
1 out of 962 
1 out of 166,409 
1 out of 132,108 
Years Active: 2011
Title: Wei-tsui Tseng: Semiconductor Interconnect Innovation.
Introduction
Wei-tsui Tseng is an inventor associated with Hopewell Junction, New York. His work includes a patented approach to improving capping layers in semiconductor interconnect structures.
Latest Patents
Tseng is credited with 1 patent: “Interconnect Structures Comprising Capping Layers with Low Dielectric Constants and Methods of Making the Same.” The invention describes integrated-circuit structures with conductive interconnects embedded in an interlevel dielectric layer and multiple SiCNH capping layers. The middle layer has a lower nitrogen content and a dielectric constant below about 4. The design aims to provide low dielectric constants while maintaining oxygen-barrier properties.
Career Highlights
Tseng’s listed company affiliations include International Business Machines Corporation and Samsung Electronics Co., Ltd. These companies have substantial activity in semiconductor technology and related research and development.
Collaborations
His listed coworkers include Griselda Bonilla and Stephan Grunow, reflecting professional connections in the semiconductor field.
Conclusion
Wei-tsui Tseng’s patent addresses semiconductor interconnect reliability and performance through carefully designed SiCNH capping layers, contributing to innovation in integrated-circuit structures.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile