Wei Tse Ho

Title: Wei Tse Ho: Innovator in Anti-Diffusion Substrate Technology

Introduction

Wei Tse Ho is a notable inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of substrate technology, particularly with his innovative approach to anti-diffusion substrate structures. His work is characterized by a focus on enhancing the reliability and performance of electronic components.

Latest Patents

Wei Tse Ho holds a patent for an "Anti-diffusion substrate structure and manufacturing method thereof." This invention includes a substrate with multiple through holes, each containing a first metal layer and an anti-diffusion layer. The anti-diffusion layer can be either an Electroless Palladium Immersion Gold (EPIG) layer or an Electroless Nickel Electroless Palladium Immersion Gold (ENEPIG) layer. The substrate circuit layer, made of a second metal layer, is mounted on the substrate and extends over the anti-diffusion layer. This design effectively prevents the migration of materials from the first metal layer to the second metal layer, enhancing the overall durability of the substrate.

Career Highlights

Wei Tse Ho is currently employed at Unimicron Technology Corporation, where he continues to develop innovative solutions in substrate technology. His work has been instrumental in advancing the capabilities of electronic devices, making them more efficient and reliable.

Collaborations

Throughout his career, Wei has collaborated with talented individuals such as Chin-Sheng Wang and Yi Ling Chen. These collaborations have contributed to the successful development of his patented technologies.

Conclusion

Wei Tse Ho is a prominent figure in the field of substrate technology, with a focus on anti-diffusion structures that enhance electronic component performance. His innovative patent and contributions to Unimicron Technology Corporation highlight his commitment to advancing technology in this area.