Wei-Nan Liao

Title: Innovations of Wei-Nan Liao

Introduction

Wei-Nan Liao is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of static random access memory (SRAM) technology. With a total of 2 patents, his work focuses on enhancing the performance and efficiency of memory systems.

Latest Patents

Wei-Nan Liao's latest patents include innovative designs that improve SRAM functionality. The first patent, titled "Control circuit of SRAM and operating method thereof," describes a control circuit that integrates a memory array, a word-line driver, a boost circuit, and a voltage level detecting circuit. This invention aims to optimize data access in memory cells by managing voltage levels effectively. The second patent, "Static random access memory apparatus and bit-line voltage controller thereof," outlines a system that includes a controller, pull-up and pull-down circuits, and a voltage keeping circuit. This design ensures stable bit-line power during operation, enhancing the reliability of SRAM devices.

Career Highlights

Wei-Nan Liao has worked with notable institutions, including National Yang Ming Chiao Tung University and Faraday Technology Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in memory technology.

Collaborations

Throughout his career, Wei-Nan Liao has collaborated with esteemed colleagues such as Ching-Te Chuang and Nan-Chun Lien. These partnerships have contributed to the advancement of his research and inventions.

Conclusion

Wei-Nan Liao's contributions to SRAM technology through his patents demonstrate his commitment to innovation in the field. His work continues to influence the development of efficient memory systems.