Wei-Hsuan Chen

Title: Wei-Hsuan Chen: Innovator in Molybdenum-Containing Device-Level Interconnects

Introduction

Wei-Hsuan Chen is an inventor based in Taoyuan City, Taiwan. He is known for his work in the field of semiconductor technology, particularly focusing on device-level interconnects. His innovative approaches aim to enhance the performance and efficiency of electronic devices.

Latest Patent Applications

Wei-Hsuan Chen has submitted a notable patent application titled "Molybdenum-Containing Device-Level Interconnects and Methods of Fabrication Thereof." This application details middle-of-line (MOL) interconnects and the techniques for forming these interconnects. An exemplary MOL interconnect structure includes a barrier-free source/drain contact, a barrier-free source/drain via, and a barrier-free gate via, all disposed in an insulator layer. The barrier-free source/drain contact is positioned on an epitaxial source/drain and comprises tungsten, molybdenum, or a combination of these materials. The barrier-free source/drain via is located on the barrier-free source/drain contact and includes molybdenum. Additionally, the barrier-free gate via is situated on a gate stack adjacent to the epitaxial source/drain and also includes tungsten, molybdenum, or a combination thereof. Notably, the width of the barrier-free source/drain via and/or the barrier-free gate via may be less than about 16 nm. These components may be formed simultaneously through a bottom-up deposition process.

Conclusion

Wei-Hsuan Chen's contributions to the field of semiconductor technology, particularly through his latest patent applications, showcase his innovative spirit and dedication to advancing electronic device performance. His work in developing molybdenum-containing interconnects is poised to have a significant impact on the industry.