Seongnam-si, South Korea

Wei-Hsiung Tseng


Average Co-Inventor Count = 6.0

ph-index = 2

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2016-2017

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2 patents (USPTO):Explore Patents

Title: Wei-Hsiung Tseng: Innovator in Semiconductor Technology

Introduction

Wei-Hsiung Tseng is a prominent inventor based in Seongnam-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to device fabrication.

Latest Patents

One of his latest patents is focused on a semiconductor device and method for fabricating the same. This method includes forming an interlayer insulating layer on a substrate, which contains a first trench. It involves creating a high-k dielectric layer within the trench, followed by the successive formation of a diffusion layer and a blocking layer on the high-k dielectric layer. The process continues with annealing, after which the blocking and diffusion layers are removed. A first barrier layer is then formed on the high-k dielectric layer, followed by the addition of a work function adjustment layer and a gate conductor. Finally, a capping layer is placed on the gate conductor.

Career Highlights

Wei-Hsiung Tseng is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the methods used in the fabrication of semiconductor devices.

Collaborations

Throughout his career, Tseng has collaborated with notable colleagues, including Ju-Youn Kim and Seok-Jun Won. These partnerships have contributed to the innovative projects he has undertaken.

Conclusion

Wei-Hsiung Tseng is a key figure in the semiconductor industry, with a focus on innovative fabrication methods. His contributions continue to shape the future of technology in this field.

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