Kaohsiung, Taiwan

Wei-Da Lin

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: United Microelectronics Corp.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wei-Da Lin. Retrieved from https://idiyas.com/inventor/wei-da-lin-pwyg6z3y

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Wei-Da Lin

Introduction

Wei-Da Lin is a notable inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on the development of advanced capacitor structures.

Latest Patents

Wei-Da Lin holds a patent for a MOS capacitor and its fabrication method. This innovative design includes a substrate with a capacitor forming region, an ion well with a first conductivity type, and a counter doping region with a second conductivity type. The patent also describes a capacitor dielectric layer, a gate electrode, and source and drain doping regions, all of which enhance the performance of the MOS capacitor.

Career Highlights

Wei-Da Lin is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His expertise in capacitor technology has positioned him as a valuable asset to the organization. He has been instrumental in advancing the company's research and development efforts.

Collaborations

Wei-Da Lin has collaborated with notable colleagues, including Jian-Li Lin and Cheng-Guo Chen. Their combined efforts have contributed to the success of various projects within the company.

Conclusion

Wei-Da Lin's innovative work in semiconductor technology, particularly in MOS capacitors, showcases his dedication to advancing the field. His contributions continue to impact the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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