Company Filing History:
Years Active: 2012
Title: We-Li Liao: Innovator in Current Leakage Reduction Technology
Introduction
We-Li Liao is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in reducing current leakage in memory arrays. His innovative approach has implications for improving the efficiency and performance of memory devices.
Latest Patents
We-Li Liao holds a patent for a technology aimed at current leakage reduction in OTP memory arrays. The patent describes an architecture that includes a bit line connected to multiple memory banks. Each memory bank consists of several memory cells, a footer, and a bias device, all associated with a current mirror. When a memory cell is activated for reading, the corresponding memory bank is termed the activated memory bank, while the others are referred to as deactivated memory banks. A current tracking device is employed to compensate for bit line leakage current in the deactivated memory cells of the activated memory bank. Additionally, footers and bias devices in the deactivated memory banks are configured to minimize or eliminate bit line current leakage through the deactivated memory cells.
Career Highlights
We-Li Liao is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work focuses on enhancing memory technology, which is crucial for various electronic applications. His innovative solutions have the potential to significantly impact the efficiency of memory devices.
Collaborations
We-Li Liao has collaborated with notable colleagues, including Sung-Chieh Lin and Kuoyuan (Peter) Hsu. These collaborations have fostered a productive environment for innovation and development in semiconductor technology.
Conclusion
We-Li Liao's contributions to current leakage reduction technology exemplify his commitment to advancing semiconductor innovations. His work not only enhances memory performance but also sets a foundation for future developments in the field.