Redondo Beach, CA, United States of America

Wayne Yoshida


Average Co-Inventor Count = 4.3

ph-index = 1

Forward Citations = 3(Granted Patents)


Location History:

  • Hermosa Beach, CA (US) (2009 - 2010)
  • Redondo Beach, CA (US) (2017 - 2022)

Company Filing History:


Years Active: 2009-2022

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4 patents (USPTO):Explore Patents

Title: Wayne Yoshida: Innovator in High Electron Mobility Transistors

Introduction

Wayne Yoshida is a notable inventor based in Redondo Beach, California. He holds a total of four patents, showcasing his contributions to the field of semiconductor technology. His work primarily focuses on high electron mobility transistors (HEMTs) and their fabrication methods.

Latest Patents

One of Yoshida's latest patents is titled "Shifting the pinch-off voltage of an InP high electron mobility transistor with a metal ring." This invention involves a HEMT device that includes a substrate and multiple semiconductor layers. The device features a metal ring that shifts the pinch-off voltage, enhancing its performance. The metal ring consists of an ohmic portion and an electrode portion, each made up of a lower titanium layer, a middle platinum layer, and an upper gold layer.

Another significant patent is "Self-aligned double gate recess for semiconductor field effect transistors." This patent describes a method for fabricating a double-recess gate structure for a field-effect transistor (FET) device. The process includes several steps, such as depositing an EBL resist layer, patterning it, and performing various etching techniques to create the necessary recesses for the gate terminal.

Career Highlights

Wayne Yoshida has worked with prominent companies in the aerospace and defense sectors, including Northrop Grumman Space & Mission Systems Corporation and Northrop Grumman Systems Corporation. His experience in these organizations has contributed to his expertise in semiconductor technologies.

Collaborations

Throughout his career, Yoshida has collaborated with talented individuals such as Xiaobing Mei and Po-Hsin Liu. These partnerships have likely enriched his work and led to innovative advancements in his field.

Conclusion

Wayne Yoshida's contributions to the field of semiconductor technology, particularly in high electron mobility transistors, demonstrate his innovative spirit and technical expertise. His patents reflect significant advancements that could influence future developments in electronics.

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