Plymouth, MN, United States of America

Wayne Theel


Average Co-Inventor Count = 1.0

ph-index = 3

Forward Citations = 41(Granted Patents)


Company Filing History:


Years Active: 2004-2006

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11 patents (USPTO):Explore Patents

Title: Wayne Theel: Innovator in Magnetoresistive Random Access Memory Technology

Introduction

Wayne Theel is a prominent inventor based in Plymouth, MN (US), known for his significant contributions to the field of magnetoresistive random access memory (MRAM) technology. With a total of 11 patents to his name, he has made remarkable advancements that enhance the performance and stability of MRAM systems.

Latest Patents

Wayne Theel's latest patents include innovative solutions aimed at improving the stability and performance of MRAM. One of his notable inventions is an apparatus designed to enhance the stability of MRAM over process and operational variations. This apparatus features a current reference circuit that provides a reference current control signal to variable analog control circuitry. The circuitry generates both a word current reference signal and a source current reference signal, which are essential for the operation of the MRAM.

Another significant patent involves a method for optimizing MRAM circuit performance. This method allows for the adjustment of operating parameters in a magnetoresistive random access memory with a tunable circuit. By measuring the operating parameters, such as word current or sense current, and tuning the circuit accordingly, the performance of the MRAM can be significantly improved.

Career Highlights

Throughout his career, Wayne Theel has worked with notable companies in the semiconductor industry. He has been associated with Union Semiconductor Technology Corporation and Union Semiconductor Technology Center, where he has contributed to various projects focused on advancing memory technology.

Conclusion

Wayne Theel's innovative work in MRAM technology has established him as a key figure in the field. His patents reflect a deep understanding of the complexities involved in memory systems and demonstrate his commitment to enhancing their performance and reliability.

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