Wayne Johnson

Title: Wayne Johnson: Innovator in III-Nitride Semiconductor Technology

Introduction

Wayne Johnson is a notable inventor based in Hampstead, NC (US), recognized for his contributions to semiconductor technology. With a total of three patents to his name, Johnson has made significant advancements in the field of III-nitride structures.

Latest Patents

Johnson's latest patents focus on the development of nucleation layers for the growth of III-nitride structures. These patents describe methods for creating nucleation layers that can enhance the performance of semiconductors. Specifically, a semiconductor can include a silicon substrate with a nucleation layer positioned above it. This nucleation layer is composed of silicon and deep-level dopants, which play a crucial role in the semiconductor's functionality. The III-nitride layer is formed over the nucleation layer, ensuring optimal performance. Notably, at least one of the silicon substrate or the nucleation layer may contain ionized contaminants, and the concentration of deep-level dopants is designed to match or exceed that of the ionized contaminants.

Career Highlights

Throughout his career, Wayne Johnson has worked with prominent companies in the semiconductor industry, including IQE Plc and IQE KC, LLC. His experience in these organizations has allowed him to refine his expertise and contribute to groundbreaking innovations in semiconductor technology.

Collaborations

Johnson has collaborated with esteemed colleagues such as Oleg Laboutin and Chen-Kai Kao, further enhancing his work in the field.

Conclusion

Wayne Johnson's innovative work in III-nitride semiconductor technology has positioned him as a key figure in the industry. His patents and collaborations reflect his commitment to advancing semiconductor technology and improving performance standards.