The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2020
Filed:
Mar. 12, 2018
Iqe, Plc, St. Mellons, Cardiff, GB;
Oleg Laboutin, South Easton, MA (US);
Chen-Kai Kao, Lexington, MA (US);
Chien-Fong Lo, Braintree, MA (US);
Wayne Johnson, Hampstead, NC (US);
Hugues Marchand, Somerville, MA (US);
IQE plc, St. Mellons, Cardiff, GB;
Abstract
Nucleation layers for growth of III-nitride structures, and methods for growing the nucleation layers, are described herein. A semiconductor can include a silicon substrate and a nucleation layer over the silicon substrate. The nucleation layer can include silicon and deep-level dopants. The semiconductor can include a III-nitride layer formed over the nucleation layer. At least one of the silicon substrate and the nucleation layer can include ionized contaminants. In addition, a concentration of the deep-level dopants is at least as high as a concentration of the ionized contaminants.