Wayne Geoffrey Risner

Title: Wayne Geoffrey Risner: Innovator in LDMOS Transistor Technology

Introduction

Wayne Geoffrey Risner is a notable inventor based in Austin, TX, recognized for his contributions to semiconductor technology. He holds 2 patents that focus on advancements in Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistors. His work has significantly impacted the field of electronics, particularly in improving the efficiency and performance of these devices.

Latest Patents

Wayne's latest patents include innovative designs for LDMOS transistors with implant alignment spacers. The first patent describes a LDMOS transistor that features a gate stack comprising a first nitride layer formed on a silicon layer. This design includes a polysilicon layer and a second oxide layer on the sidewall of the polysilicon layer, enhancing the transistor's performance. The second patent outlines a method for manufacturing this LDMOS transistor, detailing the etching process and the formation of various layers that contribute to the device's functionality.

Career Highlights

Wayne Geoffrey Risner is currently employed at NXP USA, Inc., where he continues to develop cutting-edge technologies in the semiconductor industry. His expertise in LDMOS transistors has positioned him as a key player in the field, contributing to advancements that benefit various electronic applications.

Collaborations

Wayne has collaborated with notable colleagues, including Hernan A Rueda and Rodney Arlan Barksdale. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Wayne Geoffrey Risner's work in LDMOS transistor technology exemplifies the spirit of innovation in the semiconductor industry. His patents and collaborations reflect a commitment to advancing technology and improving electronic devices.