Wataru Nakao

Title: Wataru Nakao: Innovator in Aluminum Nitride Technologies

Introduction

Wataru Nakao is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of materials science, particularly in the development of aluminum nitride technologies. With a total of three patents to his name, Nakao's work has advanced the understanding and application of aluminum nitride in various devices.

Latest Patents

Nakao's latest patents include a highly crystalline aluminum nitride multi-layered substrate and its production process. This substrate comprises a single-crystal α-alumina substrate, an aluminum oxynitride layer, and a highly crystalline aluminum nitride film as the outermost layer. The aluminum oxynitride layer features a threading dislocation density of 6.3×10/cm or less and a crystal orientation characterized by a half-value width of its rocking curve of 4,320 arcsec or less. Another notable patent is for a single crystalline aluminum nitride film and its method of formation. This laminated substrate is designed for use in group III element nitride films, light-emitting devices, and surface acoustic wave devices.

Career Highlights

Throughout his career, Wataru Nakao has worked with esteemed organizations such as the Circle for the Promotion of Science and Engineering and Tokuyama Corporation. His experience in these companies has allowed him to refine his expertise in materials science and innovation.

Collaborations

Nakao has collaborated with notable colleagues, including Hiroyuki Fukuyama and Kazuhiro Nagata. These partnerships have contributed to the advancement of his research and the successful development of his patented technologies.

Conclusion

Wataru Nakao's innovative work in aluminum nitride technologies has positioned him as a key figure in materials science. His patents reflect a commitment to advancing technology and improving device performance.