Wanxing Xu

Title: Innovations of Wanxing Xu in Atomic Layer Deposition

Introduction

Wanxing Xu is a notable inventor based in Golden, Colorado, who has made significant contributions to the field of atomic layer deposition (ALD). His innovative work focuses on enhancing the efficiency and effectiveness of deposition processes, which are crucial in various technological applications.

Latest Patents

Wanxing Xu holds a patent for a process titled "Selective Plasma Enhanced Atomic Layer Deposition." This patent describes a selective ALD process that involves loading a substrate made of dielectric material and metal into a reactor. The process includes reacting the substrate with a non-plasma based oxidant to form an oxidized metal surface. The substrate is then heated and exposed to a passivation agent, which preferentially adsorbs onto the oxidized metal surface. This exposure creates a passivation layer, followed by the application of a silicon precursor that forms a silicon-containing layer on the dielectric material. Finally, the substrate is exposed to a plasma-based oxidant, which oxidizes both the passivation layer and the silicon-containing layer, resulting in a dielectric film on the dielectric material.

Career Highlights

Wanxing Xu is currently employed at Versum Materials US, LLC, where he continues to advance his research in atomic layer deposition technologies. His work is instrumental in developing processes that improve material properties and performance in various applications.

Collaborations

Wanxing Xu collaborates with Xinjian Lei, contributing to the advancement of their shared research interests in the field of atomic layer deposition.

Conclusion

Wanxing Xu's innovative contributions to atomic layer deposition processes highlight his expertise and commitment to advancing technology in this field. His patent reflects a significant step forward in enhancing deposition techniques, which are vital for numerous applications in modern technology.