This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Huawei Technologies Co., Ltd.. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Wanliang Tan: Innovator in Ferroelectric Memory Technology
Introduction
Wanliang Tan is a prominent inventor based in Shenzhen, China. He is known for his contributions to the field of ferroelectric memory and storage devices. His innovative work has led to the development of advanced technologies that enhance data storage capabilities.
Latest Patents
Wanliang Tan holds a patent for a ferroelectric memory and storage device. This invention includes at least one bit cell, which comprises a plurality of ferroelectric capacitors and a first transistor. The first transistor features a first gate, a first channel, a first source, and a first drain. The design allows for efficient data storage and retrieval, showcasing the potential of ferroelectric materials in memory applications.
Career Highlights
Tan is currently employed at Huawei Technologies Co., Ltd., a leading global provider of information and communications technology (ICT) infrastructure and smart devices. His role at Huawei has allowed him to work on cutting-edge technologies that push the boundaries of memory storage solutions.
Collaborations
Throughout his career, Wanliang Tan has collaborated with notable colleagues, including Jeffrey Junhao Xu and Weiliang Jing. These partnerships have fostered an environment of innovation and creativity, contributing to the advancement of technology in their field.
Conclusion
Wanliang Tan's work in ferroelectric memory technology exemplifies the impact of innovative thinking in the tech industry. His contributions continue to shape the future of data storage solutions.