The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
May. 03, 2023
Huawei Technologies Co., Ltd., Shenzhen, CN;
Jeffrey Junhao Xu, Shenzhen, CN;
Weiliang Jing, Shanghai, CN;
Sitong Bu, Shenzhen, CN;
Yichen Fang, Beijing, CN;
Ying Wu, Shanghai, CN;
Zhaozhao Hou, Shenzhen, CN;
Wanliang Tan, Shenzhen, CN;
Heng Zhang, Beijing, CN;
Yu Zhang, Shanghai, CN;
Huawei Technologies Co., Ltd., Shenzhen, CN;
Abstract
Example ferroelectric memories and storage devices are described. One example ferroelectric memory includes at least one bit cell. A bit cell in the at least one bit cell includes a plurality of ferroelectric capacitors and a first transistor. The first transistor includes a first gate, a first channel, a first source, and a first drain. The first source and the first drain are located at two ends of the first channel. One electrode of each of the plurality of ferroelectric capacitors is formed on the first gate.