Suwon, South Korea

Wangyong Im

This inventor holds 2 USPTO granted patents and 3 published patent applications and 2 EPO patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2025.

USPTO Granted Patents = 2 

% Patents Active = 100.0


Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

Loading Chart...
Loading Chart...
2 patents (USPTO):Explore Patents

Title: Wangyong Im: Innovator in Semiconductor Technology

Introduction

Wangyong Im is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to memory devices and interconnect systems.

Latest Patents

One of his latest patents is for a semiconductor memory device and operation method. This device includes a cell array with multiple memory banks, a command decoder for processing read/write commands, and an address decoder for managing read and write addresses. The design allows for efficient data transmission without the need for deserialization or serialization processing, enhancing the performance of memory operations. Another notable patent is for an apparatus and method for die-to-die (D2D) interconnects. This invention features a first die connected to a second die through a D2D interface, facilitating communication between chiplet dies and optimizing signal pin usage.

Career Highlights

Wangyong Im is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has positioned him as a key player in advancing semiconductor technologies.

Collaborations

He has collaborated with notable coworkers, including Byoungkon Jo and Gyesik Oh, contributing to various projects that enhance the capabilities of semiconductor devices.

Conclusion

Wangyong Im's innovative work in semiconductor technology, particularly in memory devices and interconnect systems, highlights his significant impact on the industry. His contributions continue to shape the future of technology.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…