Shanghai, China

Wang Zheng

This inventor holds 1 USPTO granted patent. Top assignee: Grace Semiconductor Manufacturing Corporation. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wang Zheng. Retrieved from https://idiyas.com/inventor/wang-zheng-hwgjtr3x

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2006

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Wang Zheng: Innovator in Semiconductor Technology

Introduction

Wang Zheng is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods to enhance device performance.

Latest Patents

Wang Zheng holds a patent for a "Method of forming a shallow trench isolation device to prevent kick effect." This innovative method involves creating a shallow trench in a semiconductor structure using a patterned masking layer. The process includes forming a liner oxide layer and a doped dielectric layer, which ultimately helps in preventing kick effects by increasing the threshold voltage in the semiconductor structure.

Career Highlights

Wang Zheng is associated with Grace Semiconductor Manufacturing Corporation, where he applies his expertise in semiconductor fabrication. His work focuses on improving device reliability and performance through innovative isolation techniques.

Collaborations

Wang Zheng collaborates with DeXue Leng, contributing to advancements in semiconductor technologies and enhancing the capabilities of their projects.

Conclusion

Wang Zheng's contributions to semiconductor technology, particularly through his patented methods, highlight his role as an influential inventor in the industry. His work continues to impact the field positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…