The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2006
Filed:
Nov. 26, 2004
Dexue Leng, Shanghai, CN;
Wang Zheng, Shanghai, CN;
DeXue Leng, Shanghai, CN;
Wang Zheng, Shanghai, CN;
Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Abstract
A method of forming a shallow trench isolation device in order to prevent kick effects comprising a semiconductor structure having a patterned masking layer formed thereon. A shallow trench is formed in the semiconductor structure by using the patterned masking layer as a mask. A liner oxide layer and a doped dielectric layer are formed in sequence on the semiconductor structure to cover the surface of the shallow trench. A layer of oxide is formed on the semiconductor structure to fill the shallow trench. The dopants in the doped dielectric layer diffuse into the semiconductor structure surrounding the shallow trench to form an ion doped area, thereby increasing the threshold voltage caused by the recess on the corner structure in order to prevent the kick effect.