Houston, TX, United States of America

Wanda Zagozdson-Wosik

This inventor holds 1 USPTO granted patent. Top assignee: University of Houston System. Active years: 2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wanda Zagozdson-Wosik. Retrieved from https://idiyas.com/inventor/wanda-zagozdson-wosik

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2002

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Wanda Zagozdson-Wosik: Innovator in Semiconductor Technology

Introduction

Wanda Zagozdson-Wosik is a notable inventor based in Houston, Texas. He has made significant contributions to the field of semiconductor technology. His innovative work focuses on improving the efficiency and effectiveness of semiconductor devices.

Latest Patents

Wanda holds a patent for a method and apparatus related to semiconductor devices. The patent, titled "Junction formation with diffusion barrier for silicide contacts and method for forming," addresses the challenges of silicidation in silicon substrates. This invention involves applying a dopant in excess of the required amount to form a junction. The dopant chemically reacts with a metal to create a compound that serves as a barrier layer, preventing unwanted silicidation in the substrate. He has 1 patent to his name.

Career Highlights

Wanda Zagozdson-Wosik is affiliated with the University of Houston System, where he continues to advance research in semiconductor technology. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Wanda collaborates with Jia Li, contributing to the advancement of semiconductor research and development.

Conclusion

Wanda Zagozdson-Wosik is a prominent figure in the semiconductor industry, with a focus on innovative solutions for junction formation in semiconductor devices. His contributions are paving the way for advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…