The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2002
Filed:
Sep. 15, 1997
Applicant:
Inventors:
Wanda Zagozdson-Wosik, Houston, TX (US);
Jia Li, Houston, TX (US);
Assignee:
University of Houston, Houston, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/128 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/128 ; H01L 2/144 ;
Abstract
Method and apparatus are provided for a semiconductor device including a junction and contact having a diffusion barrier to control silicidation of a silicon substrate. A dopant is applied in excess of an amount required to form a junction and the dopant chemically reacts with a metal to form a compound which serves as a barrier layer to prevent silidication in the substrate.
Zagozdson-Wosik, Wanda. (2002). Junction formation with diffusion barrier for silicide contacts and method for forming (U.S. Patent No. 6444553). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6444553
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile