Kaohsiung, Taiwan

Wan Yu Chang

This inventor holds 1 USPTO granted patent. Top assignee: Advanced Semiconductor Engineering, Inc.. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wan Yu Chang. Retrieved from https://idiyas.com/inventor/wan-yu-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: The Innovations of Wan Yu Chang

Introduction

Wan Yu Chang is a notable inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing package structures and bonding methods, which are crucial for the advancement of electronic devices.

Latest Patents

Wan Yu Chang holds a patent for a bonding structure, package structure, and method for manufacturing a package structure. This patent includes a detailed description of a package structure that comprises a first substrate, a first passivation layer, a first conductive layer, and a first conductive bonding structure. The design allows for improved functionality and efficiency in electronic packaging.

Career Highlights

Wan Yu Chang is currently employed at Advanced Semiconductor Engineering, Inc. His role involves research and development in semiconductor packaging technologies. His innovative approaches have contributed to the company's reputation as a leader in the semiconductor industry.

Collaborations

Wan Yu Chang collaborates with Shao Hsuan Chuang, who is also a talented professional in the field. Their teamwork has led to advancements in semiconductor technologies and has fostered a productive working environment.

Conclusion

Wan Yu Chang's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence the development of advanced electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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