Shanhua, Taiwan

Wan-Ting Huang


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2010-2014

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3 patents (USPTO):Explore Patents

Title: The Innovations of Wan-Ting Huang

Introduction

Wan-Ting Huang is a notable inventor based in Shanhua, Taiwan. He has made significant contributions to the field of integrated circuit structures, holding a total of 3 patents. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

One of Wan-Ting Huang's latest patents is titled "Oxygen-rich layers underlying BPSG." This patent describes an integrated circuit structure and a method of forming the same. The method includes providing a surface, performing an ionized oxygen treatment to the surface, and forming an initial layer comprising silicon oxide using first process gases that include a first oxygen-containing gas and tetraethoxysilane (TEOS). Additionally, the process involves forming a silicate glass over the initial layer. The method may also include forming a buffer layer using second process gases that comprise a second oxygen-containing gas and TEOS, wherein the first and second process gases have different oxygen-to-TEOS ratios.

Career Highlights

Wan-Ting Huang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to develop innovative solutions that contribute to advancements in technology.

Collaborations

Some of Wan-Ting Huang's coworkers include Shiu-Ko JangJian and Yu-Jen Chien. Their collaboration in the field of semiconductor research has led to significant advancements in integrated circuit technology.

Conclusion

Wan-Ting Huang's contributions to the field of integrated circuits and his innovative patents highlight his role as a key inventor in the semiconductor industry. His work continues to influence the development of advanced technologies.

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