The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2014
Filed:
Jan. 25, 2012
Shiu-ko Jangjian, Tainan, TW;
Wan-ting Huang, Shanhua Township, TW;
Yu-jen Chien, Taipei, TW;
Phil Sun, Kaohsiung, TW;
Shiu-Ko JangJian, Tainan, TW;
Wan-Ting Huang, Shanhua Township, TW;
Yu-Jen Chien, Taipei, TW;
Phil Sun, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An integrated circuit structure and a method of forming the same are provided. The method includes providing a surface; performing an ionized oxygen treatment to the surface; forming an initial layer comprising silicon oxide using first process gases comprising a first oxygen-containing gas and tetraethoxysilane (TEOS); and forming a silicate glass over the initial layer. The method may further include forming a buffer layer using second process gases comprising a second oxygen-containing gas and TEOS, wherein the first and the second process gases have different oxygen-to-TEOS ratio.