Wan-Ni Shih

Title: Wan-Ni Shih: Innovator in Resistive Random Access Memory Technology

Introduction

Wan-Ni Shih is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of memory technology, particularly in the development of resistive random access memory (RRAM). His innovative approach has led to advancements that enhance the performance and reliability of memory devices.

Latest Patents

Wan-Ni Shih holds a patent for a "Method for ripening resistive random access memory." This patent outlines a process that includes obtaining a first RRAM with multiple memory cells, performing a forming operation and an initial reset operation, and determining a ripening cycle parameter based on specific memory cells. The method ultimately allows for the ripening of the first RRAM into a second RRAM, improving its functionality.

Career Highlights

Wan-Ni Shih is currently employed at Winbond Electronics Corporation, a leading company in the semiconductor industry. His work at Winbond has positioned him as a key player in the development of advanced memory technologies. With a focus on innovation, he continues to push the boundaries of what is possible in the field of electronics.

Collaborations

Throughout his career, Wan-Ni Shih has collaborated with notable colleagues, including Tsung-Huan Tsai and Lih-Wei Lin. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Wan-Ni Shih's contributions to the field of resistive random access memory exemplify the spirit of innovation. His work not only advances technology but also sets the stage for future developments in memory solutions.