Singapore, Singapore

Wan Khai Loke

This inventor holds 1 USPTO granted patent and 2 published patent applications and 1 EPO patent. Top assignee: Nanyang Technological University. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wan Khai Loke. Retrieved from https://idiyas.com/inventor/wan-khai-loke

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Wan Khai Loke: Innovator in Semiconductor Fabrication

Introduction

Wan Khai Loke is a notable inventor based in Singapore, recognized for his contributions to semiconductor technology. He has developed a unique method for fabricating gallium nitride arsenide antimonide (GaNAsSb) semiconductors, which has significant implications for the electronics industry.

Latest Patents

Wan Khai Loke holds a patent for a method of fabricating GaNAsSb semiconductors. This innovative method involves controlling various parameters such as fabrication temperature, annealing temperature, and annealing time to manage defect formation in the semiconductor. This control is essential for achieving predetermined performance characteristics, enhancing the efficiency and reliability of the semiconductor.

Career Highlights

Throughout his career, Wan Khai Loke has worked with prestigious institutions, including Nanyang Technological University and IQE Plc. His experience in these organizations has allowed him to refine his skills and contribute to advancements in semiconductor technology.

Collaborations

Wan Khai Loke has collaborated with esteemed colleagues, including Soon Fatt Yoon and Kian Hua Tan. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Wan Khai Loke's work in semiconductor fabrication exemplifies the spirit of innovation in technology. His contributions are paving the way for advancements in the field, and his patent reflects a significant step forward in semiconductor development.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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