The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2012
Filed:
Jun. 26, 2008
Soon Fatt Yoon, Singapore, SG;
Kian Hua Tan, Singapore, SG;
Wan Khai Loke, Singapore, SG;
Satrio Wicaksono, Singapore, SG;
Tien Khee NG, Singapore, SG;
Soon Fatt Yoon, Singapore, SG;
Kian Hua Tan, Singapore, SG;
Wan Khai Loke, Singapore, SG;
Satrio Wicaksono, Singapore, SG;
Tien Khee Ng, Singapore, SG;
Nanyang Technological University, Singapore, SG;
Abstract
Disclosed is a method for fabrication of a semiconductor of gallium nitride arsenide antimonide (GaNAsSb) on a substrate wherein the fabrication is performed at a fabrication temperature followed by annealing at an annealing temperature for an annealing time; wherein at least one of: the fabrication temperature, annealing temperature and annealing time, is controlled for controlling defect formation in the semiconductor so as to achieve predetermined performance characteristics of the semiconductor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile